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| MCC Features * * * omponents 21201 Itasca Street Chatsworth !"# $ % !"# MBR10150CT 10 Amp High Voltage Power Schottky High Junction Temperature Capability Good Trade Off Between Leakage Current And Forward Volage Drop Low Leakage Current Barrier Rectifier 150Volts TO-220AB B C K E PIN 1 3 * * * * Maximum Ratings Operating J unction Temperature : 150C Storage Temperature: - 50C to +150C Per d iode Thermal Resistance 4C/W Junction to Case Total Thermal Resistance 2.4C/W Junction to Case MCC Catalog Number MBR 10150 CT Maximum Recurrent Peak Reverse Voltage 150 V Maximum RMS Voltage 105V Maximum DC Blocking Voltage 150 V L M D A F G I J N Electrical Characteristics @ 25C Unless Otherwise Specified Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage MBR10150CT IF(AV) IFSM 10 A 120A TC = 155 C 8.3ms half sine HH PIN 1 PIN 3 PIN 2 CASE A B C D E F G H I J K L M N INCHES .600 .620 .393 .409 .104 .116 .244 .259 .356 .361 .137 .154 .511 .551 .094 .106 .024 .034 .019 .027 .147 .151 .173 .181 .048 .051 0.102 t y p. MM 15.25 15.75 10.00 10.40 2.65 2.95 6.20 6.60 9.05 9.15 3.50 3.93 13.00 14.00 2.40 2.70 0.61 0.88 0.49 0.70 3.75 3.85 4.40 4.60 1.23 1.32 2.6 t yp . VF VF .92V .75V IFM = 5A TJ = 25C I FM = 5A TJ = 125C Maximum Reverse Current At Rated DC Blocking Voltage IR 50 A 7m A TJ = 25C TJ = 125C * Pulse Test: Pulse Width380sec, Duty Cycle 2% www.mccsemi.com MBR10150CT MCC Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode). IF(av)(A) 6 Rth(j-a)=Rth(j-c) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 5.0 = 0.2 = 0.5 = 0.1 4.5 4.0 = 0.05 3.5 =1 3.0 2.5 2.0 1.5 T 1.0 0.5 IF(av) (A) tp =tp/T 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5 4 3 2 1 0 =tp/T tp T Rth(j-a)=15C/W Tamb(C) 50 75 100 125 150 175 0 25 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 80 70 60 50 40 30 20 10 0 1E-3 IM t Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 Tc=50C 0.6 0.4 0.2 = 0.5 Tc=75C = 0.2 = 0.1 Tc=125C T =0.5 t(s) 1E-2 1E-1 1E+0 Single pulse tp(s) 1E-2 1E-1 0.0 1E-3 =tp/T tp 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode) IR(A) 1E+5 1E+4 1E+3 1E+2 1E+1 1E+0 1E-1 1E-2 VR(V) 0 25 50 75 100 125 150 Tj=75C Tj=175C Tj=150C Tj=125C Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 200 100 50 F=1MHz Tj=25C Tj=25C 20 VR(V) 10 1 2 5 10 20 50 100 200 www.mccsemi.com MBR10150CT MCC Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35m) (STPS10150CG only). Rth(j-a) (C/W) 80 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=125C Typical values 70 60 50 Tj=25C 10.0 Tj=125C 40 30 20 10 0 0 2 4 6 8 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 S(cm) 10 12 14 16 18 20 www.mccsemi.com |
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